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Sub-millimeter wave active imaging with silicon integrated circuits

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1 Author(s)
U. R. Pfeiffer ; High-Frequency and Communication Technology, University of Wuppertal, Wuppertal, Germany

This paper reviews recent advances in sub-millimeter wave circuit design based on silicon (SiGe and CMOS) process technologies for active imaging applications. Computed Tomography (CT) imaging results at 650 GHz, heterodyne transmission and reflection mode imaging at 820 GHz, and magnitude and phase imaging at 160 GHz in silicon process technologies are presented.

Published in:

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on

Date of Conference:

2-7 Oct. 2011