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Ambipolar Gate-Controllable SiNW FETs for Configurable Logic Circuits With Improved Expressive Capability

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3 Author(s)
Davide Sacchetto ; Microelectronic Systems Laboratory, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland ; Yusuf Leblebici ; Giovanni De Micheli

In this letter, we report on the fabrication and characterization of ambipolar silicon-nanowire (SiNW) field-effect transistors (FETs) with a double-independent-gate (DIG) structure for polarity control. Several structures are fabricated, showing the effectiveness of local back gate to enable switchable ambipolar functionality. Moreover, AND, NAND , NOR, XOR, and XNOR binary logic functions can be obtained with a single gate, depending on the encoding values used for the input signals. Repeatable behaviors of DIG SiNW FETs are considered as enablers for ambipolar-controlled logic, with all the benefits related to the maturity of the silicon technology.

Published in:

IEEE Electron Device Letters  (Volume:33 ,  Issue: 2 )