Referenced Items are not available for this document.
A cascode class-E power amplifier (PA) operating at 5.2 GHz has been designed using Advanced Design System simulation. RF circuit performances such as output power and power-added efficiency before and after RF stress have been experimentally investigated. The measured output power, power-added efficiency, and linearity after high-input-power RF stress at elevated supply voltage show significant circuit degradations. The impact of hot-carrier injection and gate oxide soft breakdown on cascode class-E PA reliability is discussed.
Published in:
Device and Materials Reliability, IEEE Transactions on
(Volume:12
,
Issue:
2
)
Date of Publication: June 2012
- Page(s):
- 369 - 375
- ISSN :
- 1530-4388
- INSPEC Accession Number:
- 12769129
- Digital Object Identifier :
- 10.1109/TDMR.2011.2179548
- Product Type:
- Journals & Magazines
- Date of Publication :
- 13 December 2011
- Date of Current Version :
- 01 June 2012
- Issue Date :
- June 2012
- Sponsored by :
- IEEE Electron Devices Society
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