By Topic

Thermoelectric Characterization and Power Generation Using a Silicon-on-Insulator Substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Jaeho Lee ; Department of Mechanical Engineering, Stanford University, Stanford, CA, USA ; SangBum Kim ; Amy Marconnet ; M. A. A. in 't Zandt
more authors

We demonstrate techniques for measuring thermoelectric voltages and generating on-chip power using a silicon-on-insulator substrate. Our design uses lateral heat conduction in the silicon overlayer to establish temperature gradients, which dramatically reduces microfabrication complexity compared to competing designs based on a free-standing membrane. This letter characterizes the thermoelectric power of a metal-semiconductor structure involving a doped SbTe alloy that is relevant for phase-change memory. The thermoelectric power of the SbTe-TiW thermocouple is 24 μV/K, and the power generation output achieves up to 0.56 μW/cm2 with a temperature gradient of 18°K.

Published in:

Journal of Microelectromechanical Systems  (Volume:21 ,  Issue: 1 )