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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:110 Issue:11 Help

Magnetic field modulated dielectric relaxation behavior of Pt/BiScO3-PbTiO3/La0.7Sr0.3MnO3 heterostructure in metal-insulator transition region: An equivalent-circuit method

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9 Author(s)
Zhu, Junyu ; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Rd., Shanghai 200241, People’s Republic of China ; Jing Yang ; Bai, Wei ; Duan, Chungang
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Utilizing temperature and magnetic field dependent dielectric spectroscopy, two different dielectric relaxation processes, both accompanied with prominent positive magnetodielectric (MD) effects, were observed in Pt/BiScO3-PbTiO3/La0.7Sr0.3MnO3 (Pt/BSPT/LSMO) heterostructure. An equivalent circuit model is established to quantitatively describe the relaxation data well. The simulation results elucidated that one relaxation process can be attributed to magnetic order associated BSPT/LSMO interfacial relaxation with abnormal dynamics feature. Another one is due to the external contact interface contributions. Both relaxation dynamics can be tuned, via magnetic field controlled localization of free interfacial charges, to induce MD effects in BSPT/LSMO interfaces and nonmagnetic Pt/BSPT contacts.

Published in:
Journal of Applied Physics  (Volume:110 ,  Issue: 11 )

Date of Publication: Dec 2011

Page(s):
114118 - 114118-4
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.3667289
Product Type:
Journals & Magazines
Date of Current Version :
15 December 2011
Issue Date :
Dec 2011

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