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This work outlines the analysis and design procedure employed for the realisation of a broadband Continuous Class-F power amplifier. Waveform analysis is used in determining the most sensitive parameters for maintaining high efficiency over a desired bandwidth. A design methodology is then employed for control of the dominant parameters over the band of interest, while preserving maximum fundamental output power. By using a commercially available GaN Cree 10W HEMT transistor, an amplifier was fabricated which is operational over a 20% bandwidth. Greater than 11.4W of output power is found with efficiencies between 65-76% measured over the band from 2.15-2.65GHz. An average drain efficiency of 70.5% and PAE of 65% is obtained with a corresponding average output power of 13.5W.