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A 60 GHz four channel beamforming transmitter in 0.25 μm SiGe BiCMOS technology

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4 Author(s)
Elkhouly, M. ; Circuit Design Dept., IHP Microelectron., Frankfurt (Oder), Germany ; Glisic, S. ; Ellinger, F. ; Schyett, J.C.

A four channel 60 GHz beamforming transmitter based on an RF phase shifting architecture is developed fabricated in a SiGe BiCMOS process. The transmitter includes an integrated 48 GHz frequency synthesizer, an up-conversion mixer, and a fully differential millimeter-wave power division and distribution network. Each channel consists of a 2 bit digitally controlled phase shifter and a high power amplifier. The transmitter has approximately 17 dB conversion gain per channel. The maximum saturated RF output power is 15.8 dBm. Each channel dissipates 600 mW.

Published in:

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Date of Conference:

10-11 Oct. 2011