Referenced Items are not available for this document.
A test bench allowing S-parameters measurements from 10 Hz to 40 GHz has been set-up, this set-up has been used to investigate the DC to RF behavior of AlInN/GaN HEMTS. The measurement performed have demonstrated the dispersion effects observed on GaN HEMTS due to trapping effects and proved very useful for in-depth characterization of RF devices.
Published in:
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Date of Conference: 10-11 Oct. 2011
- Page(s):
- 5 - 8
- Print ISBN:
- 978-1-61284-236-3
- INSPEC Accession Number:
- 12437244
- Conference Location :
- Manchester
- Product Type:
- Conference Publications
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