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A 56–65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs

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8 Author(s)
Schwantusche, D. ; Fraunhofer Inst. Appl. Solid-State Phys. (IAF), Freiburg, Germany ; Haupt, C. ; Kiefer, R. ; Bruckner, P.
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In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using 100 nm AlGaN/GaN dual-gate HEMTs. For the fabricated dual-stage amplifier a continuous wave saturated output power of up to 24.8 dBm (0.84 W/mm) at 63 GHz for 20 V drain bias was measured. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.

Published in:

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Date of Conference:

10-11 Oct. 2011