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A variable gain distributed amplifier with low voltage and low power in 0.18-μm CMOS technology

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4 Author(s)
Ping Chen ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Ze-Yu Liao ; Che-Chung Kuo ; Huei Wang

In this paper, a variable gain distributed amplifier (VGDA) is demonstrated using 0.18-μm CMOS technology. The forward body bias and the variable-resistance PMOS are utilized to achieve a low voltage and low power VGDA. The VGDA presents a measured maximum small signal gain of 18.1 dB, a 3-dB bandwidth from 2.2 to 13.6 GHz, and a gain control range of 38 dB. The noise figure is between 4.9 and 5.6 dB from 3.1 to 10.6 GHz. The highest-bias is 0.7-V and the power consumption is 25 mW under 0.62-V gate bias. The chip size is only 0.58 mm2. To author's knowledge, this circuit has the lowest power consumption and smallest chip size among all the reported variable gain distributed amplifiers covering 3.1 to 10.6 GHz.

Published in:

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Date of Conference:

10-11 Oct. 2011