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This paper reports on a 50W high efficiency wide band InGaP/GaAs high voltage HBT (HVHBT) two stage MMIC operating at 750MHz to 960MHz. It uses a high breakdown voltage, high ruggedness HBT process developed by TriQuint Semiconductor. The device employs a temperature compensation bias circuit to stabilize bias current change over temperature. The P-1dB of the device reaches 47dBm (50W), with a gain of around 31dB, collect efficiency of 65%. Test with a DPD (digital pre-distortion) system, this MMIC can reach ACLR of -57dBc at Pout=41dBm with collect efficiency of 36% for WCDMA two carriers modulation signal (PAR=6.5dBc, 2c0110 signal configuration).