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High efficiency, wide band 50 Watt, 28V InGaP/GaAs HBT MMIC

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9 Author(s)
Wenlong Ma ; TriQuint Semiconductor 3099 Orchard Drive, San Jose, California, 95134, USA ; Xiaopeng Sun ; Philip Lam ; Peter Hu
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This paper reports on a 50W high efficiency wide band InGaP/GaAs high voltage HBT (HVHBT) two stage MMIC operating at 750MHz to 960MHz. It uses a high breakdown voltage, high ruggedness HBT process developed by TriQuint Semiconductor. The device employs a temperature compensation bias circuit to stabilize bias current change over temperature. The P-ldB of the device reaches 47dBm (50W), with a gain of around 31dB, collect efficiency of 65 % . Test with a DPD (digital pre-distortion) system, this MMIC can reach ACLR of -57dBc at Pout=41dBm with collect efficiency of 36% for WCDMA two carriers modulation signal (PAR=6.5dBc, 2c0110 signal configuration).

Published in:

Microwave Conference (EuMC), 2011 41st European

Date of Conference:

10-13 Oct. 2011