By Topic

Experimental Investigation of an Integrated Optical Interface for Power MOSFET Drivers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Vafaei, R. ; Grenoble Electr. Eng. Lab., Grenoble Univ. 1, St. Martin d''Hères, France ; Rouger, N. ; To, D.N. ; Crebier, J.

To solve the galvanic isolation challenges in drivers related to gate signal transfer to power transistors, an optical detector was monolithically integrated within a 600 V vertical power transistor without any modifications in the fabrication process. After fabricating an initial prototype, preliminary static and dynamic characterization results have been investigated. The fabricated devices showed responsivities of 0.046 A/W at 0 V bias and 0.15 A/W at 15 V reverse bias and a bandwidth of at least 800 kHz when triggered with a 525 nm wavelength LED at an optical power in the microwatt range.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 2 )