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Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD

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10 Author(s)
S. M. Sultan ; School of Electronics and Computer Science, University of Southampton, Southampton, U.K. ; K. Sun ; O. D. Clark ; T. B. Masaud
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Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3-18.6 μm, are then fabricated using these 80 nm × 40 nm nanowires. Measured electrical results show n-type enhancement behavior and a breakdown voltage ≥75 V at all channel lengths. This is the first report of high-voltage operation for ZnO nanowire FETs. Reproducible well-behaved electrical characteristics are obtained, and the drain current scales with 1/L, as expected for long-channel FETs. A respectable ION/IOFF ratio of 2×106 is obtained.

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IEEE Electron Device Letters  (Volume:33 ,  Issue: 2 )