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Transport-Analysis-Based 3-D TCAD Capacitance Extraction for Sub-32-nm SRAM Structures

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2 Author(s)
Bhoj, A.N. ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; Joshi, R.V.

Capacitance extraction for nanoscale circuits operating at high frequencies plays an important role in accurately modeling postlayout electrical behavior. In this work, for the first time, a layout-independent 3-D technology computer-aided design (TCAD)-based methodology is used to precisely compute front-end-of-the-line (FEOL) and back-end-of-the-line capacitances in SRAM structures using advanced sub-32-nm SOI process assumptions. Results for multicell single-/dual-ported 6T SRAM blocks highlight the need to model FEOL silicon as a semiconductor, incorporating field-carrier interactions (which are completely ignored by field solvers), and the inadequacy of single-cell 3-D TCAD-based capacitance extractions. The 3-D TCAD methodology is applied to an experimental 32-nm SOI process and is in close agreement with measured data, in the presence of FEOL variations.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 2 )

Date of Publication:

Feb. 2012

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