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High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

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5 Author(s)
Yu-Chiang Chao ; Institute of Physics, National Chiao Tung University, HsinChu 300, Taiwan ; Chung, Chin-Ho ; Hsiao-Wen Zan ; Hsin-Fei Meng
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A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 104, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 23 )