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We studied the spatial localization of excitons bound to nitrogen (N) pairs in N δ-doped GaAs to make clear origin of bound exciton lines. An extremely high uniformity of the emission wavelength was achieved for the exciton bound to the N pairs because of the uniform strain field in the N δ-doped layer fabricated in the (001) plane in the atomically controlled way. The magneto-photoluminescence spectra in the Faraday configuration showed a mixing of the bright- and dark-exciton components in the exciton fine structure and diamagnetic shift. The spatial distribution of the excitons localized at different N pairs was estimated using the diamagnetic shift coefficient and confirmed by the radiative lifetime of the bright-exciton component. According to the estimated spatial distribution of bound-exciton wave function, it was found that the exciton for the 1.444-eV line is localized stronger than that for the 1.493-eV line. The strong electron confinement for the 1.444-eV line results in the reduction of exciton-phonon interaction.