By Topic

Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched 28Si

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

15 Author(s)
Steger, M. ; Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada ; Yang, A. ; Sekiguchi, T. ; Saeedi, K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3651774 

Deep luminescence centers in Si associated with transition metals have been studied for decades, both as markers for these deleterious contaminants, as well as for the possibility of efficient Si-based light emission. They are among the most ubiquitous luminescence centers observed in Si, and have served as testbeds for elucidating the physics of isoelectronic bound excitons, and for testing ab-initio calculations of defect properties. The greatly improved spectral resolution resulting from the elimination of inhomogeneous isotope broadening in the recently available highly enriched 28Si enabled the extension of the established technique of isotope shifts to the measurement of isotopic fingerprints, which reveal not only the presence of a given element in a luminescence center, but also the number of atoms of that element. This has resulted in many surprises regarding the actual constituents of what were thought to be well-understood deep luminescence centers. Here we summarize the available information for four families of centers containing either four or five atoms chosen from (Li, Cu, Ag, Au, Pt). The no-phonon transition energies, their isotope shifts, and the local vibrational mode energies presented here for these deep centers should prove useful for the still-needed theoretical explanations of their formation, stability and properties.

Published in:

Journal of Applied Physics  (Volume:110 ,  Issue: 8 )