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An analytical model of the thin-film silicon-on-insulator tunneling field effect transistor (TFET) is developed. It takes into account the quantum-dimensional effects in Si-film and a tunneling probability change along the transistor p-n + junction. The gate controls the tunneling current, therefore changing the tunneling probability and energy window, where electron tunneling takes place. If the device base is non-degenerated, the window size strongly depends on the gate voltage. This causes appearance of the gate voltage area with the drain current abrupt change, extreme low swing, and high transconductance. The model represented can be applied for single-gate and double-gate TFETs.