By Topic

Improved reliability of magnetic field programmable gate arrays through the use of memristive tunnel junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Munchenberger, Jana ; Bielefeld University, Thin Films and Physics of Nanostructures, Bielefeld 33615, Germany ; Krzysteczko, Patryk ; Reiss, Gunter ; Thomas, Andy

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Since the recent successful implementation of the long-hypothesized memristor, its use in neuronal computing and in the reproduction of biological neural networks has gained increasing attention. In addition to the development of these new applications, the growing number of devices with memristive properties is promising to improve already established technologies. Herein, we use the recently reported memristance in magnesium-oxide-based magnetic tunnel junctions to improve the error tolerance in magnetic random access memory and magnetic field programmable logic arrays.

Published in:

Journal of Applied Physics  (Volume:110 ,  Issue: 9 )