IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Journal of Applied Physics ...> Volume:110 Issue:11 Help

Increased grain boundary critical current density Jcgb by Pr-doping in pulsed laser–deposited Y1-xPrxBCO thin films

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Irjala, M. ; Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, Turku FI-20014, Finland ; Huhtinen, H. ; Awana, V. P. S. ; Falter, M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3664773 

A comparative study has been performed on Pr-doped Y1-x PrxBCO (x=0-0.20) thin films deposited by pulsed laser deposition on MgO and buffered NiW substrates to study the effect of Pr-doping on the grain boundary critical current density (Jcgb). Our earlier work on bulk materials and SrTiO3 substrates indicated that, whereas Pr increases Jc in bulk samples, it does not increase Jc in film samples without grain boundaries. In this work, we present increased Jc in low concentrations of Pr3+-doping (x< 0.04) at temperatures above 60 K in film samples on MgO substrates and at all temperatures and fields in film samples on buffered NiW substrates. Results indicate that Pr segregates into grain boundary regions, improving the local hole concentration and carrier density, hence, increasing Jcgb.

Published in:
Journal of Applied Physics  (Volume:110 ,  Issue: 11 )

Date of Publication: Dec 2011

Page(s):
113905 - 113905-8
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.3664773
Product Type:
Journals & Magazines
Date of Current Version :
12 December 2011
Issue Date :
Dec 2011

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.