By Topic

Analysis of pulsed high-density HBr and Cl2 plasmas: Impact of the pulsing parameters on the radical densities

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Bodart, P. ; Laboratoire des Technologies de la Microélectronique, CNRS-LTM, 17 rue des Martyrs, Grenoble 38054, France ; Brihoum, M. ; Cunge, G. ; Joubert, O.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The dynamic of charged particles in pulsed plasma is relatively well known since the 1990s. In contrast, works reporting on the impact of the plasma modulation frequency and duty cycle on the radicals’ densities are scarce. In this work, we analyze the impact of these modulation parameters on the radicals’ composition in Cl2 and HBr plasmas. The radicals’ densities are measured by broad-band UV and vacuum-ultraviolet (VUV) absorption spectroscopy and modulated-beam mass spectrometry. We show that pulsing the rf power allows controlling the plasma chemistry and gives access to the plasma conditions that cannot be reached in continuous wave plasmas. In particular, we show that above 500 Hz, the pulsing frequency has no influence on the plasma chemistry, whereas in contrast the duty cycle is an excellent knob to control the fragmentation of the parent gas, thus the chemical reactivity of the discharge. At low duty cycle, a reduced gas fragmentation combined with a large ion flux leads to new etching conditions, compared to cw plasmas and the expected consequences on pulsed-etching processes are discussed.

Published in:

Journal of Applied Physics  (Volume:110 ,  Issue: 11 )