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Electrical characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing core-shell CuInS2-ZnS quantum dots embedded in a poly(methyl methacrylate) layer

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6 Author(s)
Wan Han, Kyu ; Department of Information Display Engineering, Hanyang University, Seoul 133-791, Korea ; Ho Lee, Min ; Whan Kim, Tae ; Yeol Yun, Dong
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Nonvolatile memory devices were fabricated with core-shell CuInS2-ZnS quantum dots (QDs) embedded in poly(methyl methacrylate) (PMMA). Capacitance-voltage (C-V) measurements at 300 K on the Al/CuInS2-ZnS QDs embedded in PMMA layer/p-Si device showed capacitance hysteresis behaviors with a flatband voltage shift. The memory window of the device increased with increasing applied sweep voltage and saturated at high electric fields due to the current leakage. Capacitance-time measurements showed that the retention time was larger than 1 × 105 s that was more than 10 years. The operating mechanisms for the devices are described on the basis of the C-V curves.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 19 )

Date of Publication:

Nov 2011

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