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Magnetoresistance in an ultrathin Bi2Se3 film between two ferromagnetic insulators

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5 Author(s)
Yang, Yunyou ; National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China ; Xu, Zhong ; Sheng, L. ; Shen, R.
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We theoretically investigate the magnetoresistance effect of an ultrathin Bi2Se3 film sandwiched between two ferromagnetic insulators (FIs). It is found that the conductance is quantized to be e2/h and vanishing, respectively, for parallel and antiparallel magnetization configurations of the two FIs, which stems from a transition of the Bi2Se3 film from the quantum anomalous Hall phase to a conventional insulator. This quantum magnetoresistance is robust against disorder scattering.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 18 )

Date of Publication:

Oct 2011

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