By Topic

Electrical properties of HfO2/La2O3 gate dielectrics on Ge with ultrathin nitride interfacial layer formed by in situ N2/H2/Ar radical pretreatment

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Lin, Ming-Ho ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan ; Lan, Chun-Kai ; Chen, Chih-Chiao ; Wu, Jyun-Yi

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3658397 

In situ N2/H2/Ar radical pretreatment on p-type Ge (100) with HfO2/La2O3 high-κ gate oxide was investigated by remote rf plasma on radical-assisted atomic layer deposition. The interfacial LaGeOxNy formation and Ge outdiffusion were also investigated by x-ray photoelectron spectroscopy and transmission electron microscopy. The high-κ MOS device with an ultrathin LaGeOxNy interfacial layer shows good electrical characteristics, including larger κ value, smaller equivalent oxide thickness, lower leakage current density, smaller C-V hysteresis, and lower interface-state density. The involved mechanism lies in that the LaGeOxNy interfacial layer can effectively block Ge outdiffusion, thus improving the high-κ films/Ge interface quality.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 18 )