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Study of surface passivation of crystalline silicon with amorphous silicon carbide deposited by plasma enhanced chemical vapor deposition

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2 Author(s)
Klein, D. ; Helmholtz-Zentrum Berlin für Materialien und Energie, Institute Solar Fuels (E-I6), Hahn-Meitner-Platz 1, D-14109 Berlin, Germany ; Kunst, M.

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Electrical passivation induced by a silicon carbide coating deposited on mono-crystalline silicon substrate was investigated by means of photo-conductivity measurements. Roles of the fixed charges and surface defects were compared with silicon nitride coating. The passivation mechanisms were found to be the same as for silicon nitride but a smaller number of fixed charges in the range of the silicon oxide was calculated.

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Applied Physics Letters  (Volume:99 ,  Issue: 23 )