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Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

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7 Author(s)
Ahn, Jaesoo ; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA ; Geppert, Irina ; Gunji, Marika ; Holland, Martin
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We describe the electrical properties of atomic layer deposited TiO2/Al2O3 bilayer gate oxides which simultaneously achieve high gate capacitance density and low gate leakage current density. Crystallization of the initially amorphous TiO2 film contributes to a significant accumulation capacitance increase (∼33%) observed after a forming gas anneal at 400 °C. The bilayer dielectrics reduce gate leakage current density by approximately one order of magnitude at flatband compared to Al2O3 single layer of comparable capacitance equivalent thickness. The conduction band offset of TiO2 relative to InGaAs is 0.6 eV, contributing to the ability of the stacked dielectric to suppress gate leakage conduction.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 23 )

Date of Publication:

Dec 2011

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