By Topic

Evaluating the electrical properties of silicon wafer solar cells using hyperspectral imaging of luminescence

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Peloso, Matthew P. ; Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Singapore 117574, Singapore ; Sern Lew, Jen ; Trupke, Thorsten ; Peters, Marius
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3664134 

A line-imaging spectrometer is used to collect the spectrum of electroluminescence at each point of a multicrystalline silicon wafer solar cell. Characterization of the diffusion lengths of minority charge carriers is developed using a specific feature of the luminescence spectral signature. It is shown that various material and device parameters affecting the luminescence spectral signature may be determined independently. Diffusion length images derived from the proposed hyperspectral method are assessed against diffusion lengths obtained by light beam induced current measurements. Using hyperspectral imaging, diffusion lengths of minority charge carriers in a silicon wafer solar cell can be determined.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 22 )