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Cliff-like conduction band offset and KCN-induced recombination barrier enhancement at the CdS/Cu2ZnSnS4 thin-film solar cell heterojunction

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12 Author(s)
Bar, M. ; Solar Energy Research, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Hahn-Meitner-Platz 1, D-14109 Berlin, Germany ; Schubert, B.-A. ; Marsen, B. ; Wilks, R. G.
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The electronic structure of the CdS/Cu2ZnSnS4 (CZTS) heterojunction was investigated by direct and inverse photoemission. The effects of a KCN etch of the CZTS absorber prior to CdS deposition on the band alignment at the respective interface were studied. We find a “cliff”-like conduction band offset at the CdS/CZTS interface independent of absorber pretreatment and a significant etch-induced enhancement of the energetic barrier for charge carrier recombination across the CdS/CZTS interface.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 22 )

Date of Publication:

Nov 2011

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