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Enhanced carrier mobility and electrical stability of n-channel polymer thin film transistors by use of low-k dielectric buffer layer

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4 Author(s)
Sunjoo Kim, Felix ; Department of Chemical Engineering and Department of Chemistry, University of Washington, Seattle, Washington 98195, USA ; Hwang, Do-Kyung ; Kippelen, Bernard ; Jenekhe, Samson A.

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Insertion of a low-k polymer dielectric layer between the SiO2 gate dielectric and poly(benzobisimidazobenzophenanthroline) (BBL) semiconductor of n-channel transistors is found to increase the field-effect mobility of electrons from 3.6 × 10-4 cm2/Vs to as high as 0.028 cm2/Vs. The enhanced carrier mobility was accompanied by improved multicycling stability and durability in ambient air. Studies of a series of eight polymer dielectrics showed that the electron mobility increased exponentially with decreasing dielectric constant, which can be explained to result from the reduced energetic expense of charge-carrier/dipole interaction.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 17 )

Date of Publication:

Oct 2011

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