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Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy

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6 Author(s)
Sodabanlu, Hassanet ; Research Center for Advance Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8904, Japan ; Yang, Jung-Seung ; Tanemura, Takuo ; Sugiyama, Masakazu
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Intersubband absorption saturation at 1.57 μm wavelength was observed in a 400-μm long Si3N4-rib AlN-based waveguide with GaN/AlN multiple quantum wells (MQWs) fabricated by metalorganic vapor phase epitaxy (MOVPE). The self-saturation measurement was employed using a 1.56-μm short pulse laser which has a temporal width of 0.4 ps (full-width at half-maximum) and a repetition rate of 63 MHz. An intersubband absorption saturation by 5 dB was achieved using a pulse energy of 115 pJ. We have demonstrated the capability of MOVPE-grown GaN/AlN MQWs for intersubband optical devices operated at communication wavelength.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 15 )

Date of Publication:

Oct 2011

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