IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Applied Physics Letters ...> Volume:99 Issue:23 Help

Graphene based Schottky junction solar cells on patterned silicon-pillar-array substrate

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Feng, Tingting ; Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China ; Xie, Dan ; Lin, Yuxuan ; Zang, Yongyuan
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3665404 

Graphene-on-silicon Schottky junction solar cells were prepared with pillar-array-patterned silicon substrate. Such patterned substrate showed an anti-reflective characteristic and led to an absorption enhancement of the solar cell, which showed enhanced performance with short-circuit current density, open-circuit voltage, fill factor, and energy conversion efficiency of 464.86 mV, 14.58 mA/cm2, 0.29, and 1.96%, respectively. Nitric acid was used to dope graphene film and the cell performance showed a great improvement with efficiency increasing to 3.55%. This is due to the p-type chemical doping effect of HNO3 which increases the work function and the carrier density of graphene.

Published in:
Applied Physics Letters  (Volume:99 ,  Issue: 23 )

Date of Publication: Dec 2011

Page(s):
233505 - 233505-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3665404
Product Type:
Journals & Magazines
Date of Current Version :
12 December 2011
Issue Date :
Dec 2011

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.