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Vertical-Gate Si/SiGe Double-HBT-Based Capacitorless 1T DRAM Cell for Extended Retention Time at Low Latch Voltage

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8 Author(s)
Ja Sun Shin ; Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea ; Hyunjun Choi ; Hagyoul Bae ; Jang, Jaeman
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A vertical-gate Si/SiGe double heterojunction bipolar transistor (VerDHBT)-based capacitorless 1T DRAM cell is proposed for improved storage performance with a fabrication feasibility through a selective epitaxy. It is verified through a TCAD device simulation for dc and transient characteristics of the proposed VerDHBT-based 1T DRAM. The off-state leakage current was significantly reduced, while the on-current was considerably increased with SIF/Bmid/DIF = SiGe/SiGe/Si as the interfacial source/middle body/interfacial drain. A large hysteresis window for the “read 1” from the “read 0” and a long retention time at low latch voltage could be also obtained.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 2 )

Date of Publication:

Feb. 2012

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