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High temperature sensor based on SiC Schottky diodes with undoped oxide ramp termination

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7 Author(s)
Pascu, R. ; Nat. Inst. for R&D in Microtechnol. (IMT), Bucharest, Romania ; Draghici, F. ; Badila, M. ; Craciunoiu, F.
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A simple technology of 4H-SiC Schottky diode with oxide ramp termination is presented. The ramp is controlled by two undoped layers: an annealed (compact) oxide layer and as deposited layer, respectively.

Published in:
Semiconductor Conference (CAS), 2011 International  (Volume:2 )

Date of Conference: 17-19 Oct. 2011

Page(s):
379 - 382
ISSN :
1545-827X
Print ISBN:
978-1-61284-173-1
INSPEC Accession Number:
12438839
Conference Location :
Sinaia
Digital Object Identifier :
10.1109/SMICND.2011.6095823

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