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Ga doped ZnO thin films deposited by RF magnetron sputtering — Preparation and properties

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6 Author(s)
Irimia, M. ; Fac. of Phys., Al. I. Cuza Univ. of Iasi, Iasi, Romania ; Rambu, A.P. ; Zodieru, G. ; Leonte, I.I.
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Gallium doped zinc oxide, GZO, thin films have been deposited onto glass substrate by RF magnetron sputtering at various substrate temperatures. The electrical and optical properties of the thin films have been studied as a function of substrate temperature. X-ray diffraction was used in order to investigate thin film structures. The thin film structure was stabilised by heating the samples in air at 423K. The best electrical conductivity and transmittance of GZO thin films was obtained when the substrate temperature was 473K.

Published in:

Semiconductor Conference (CAS), 2011 International  (Volume:2 )

Date of Conference:

17-19 Oct. 2011