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For the first time, we construct poly-Si thin-film transistors (TFTs) with novel L-shaped poly-Si fin channels (poly-Si TFTs with L-fin channels, called LFin-TFTs). The L-fin channels of LFin-TFTs are similar to the multiple-gated fin channels of FinFETs. The LFin-TFTs exhibit a low supply gate voltage (3 V), a good subthreshold swing (SS) ~ 190 mV/dec, and a high on/off current ratio (ION/IOFF)>; 106 (VD=1 V) without hydrogen-related plasma treatments. After Ni salicidation, the devices exhibit steep SS ~ 148 mV/dec and ION/IOFF ~ 107. After NH3 plasma treatment, the characteristics of the devices are further improved. The LFin-TFTs have steeper SS ~ 132 mV/dec, higher (ION/IOFF)>; 107, and threshold voltage (VTH) ~ 0.036 V.
Date of Publication: Feb. 2012