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MOSFETs Made From GaN Nanowires With Fully Conformal Cylindrical Gates

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7 Author(s)
Blanchard, P.T. ; Nat. Inst. of Stand. & Technol., Boulder, CO, USA ; Bertness, K.A. ; Harvey, T.E. ; Sanders, A.W.
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We report novel metal-oxide-semiconductor field effect transistors (MOSFETs) based on individual gallium nitride (GaN) nanowires with fully conformal cylindrical gates. The W/Al2O3 gates were deposited by atomic layer deposition. Reverse-bias breakdown voltages exceeded the largest gate voltage tested (-35 V). The nanowire MOSFETs showed complete pinchoff, with threshold voltages between -4 and -12 V. Maximum transconductances exceeded 10 μS, and ON/OFF current ratios higher than 10 8 were measured. Significant gating hysteresis and memory effects were also present, indicative of charge traps. Although further optimization is needed, these results represent a promising step forward in the development of efficient GaN nanowire-based FETs.

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Nanotechnology, IEEE Transactions on  (Volume:11 ,  Issue: 3 )