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Electrochemical Metallization Resistive Memory Devices Using \hbox {ZnS-SiO}_{2} as a Solid Electrolyte

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5 Author(s)
J. Q. Huang ; Data Storage Institute, Agency for Science, Technology and Research (A $^{ast}$STAR), Singapore ; L. P. Shi ; E. G. Yeo ; K. J. Yi
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The high performance of a resistive memory device based on electrochemical metallization is presented. With a solid electrolyte mixture consisting of zinc sulfide and silicon dioxide, the device combines the strengths of pure sulfide and pure oxide electrolytes, and exhibits various attractive characteristics such as forming-free switching, reasonably low currents, and high speed. Bipolar switching with an ON/OFF-state resistance ratio of about 100 is demonstrated by a direct-current quasi-static sweep. Pulse characterization shows that the device can be bistably SET and RESET using square pulses with pulsewidth down to 10 ns. Reliable endurance of 105 cycles and a stable retention time up to 106 s are also achieved.

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IEEE Electron Device Letters  (Volume:33 ,  Issue: 1 )