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Electrochemical Metallization Resistive Memory Devices Using \hbox {ZnS-SiO}_{2} as a Solid Electrolyte

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5 Author(s)
Huang, J.Q. ; Data Storage Inst., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore ; Shi, L.P. ; Yeo, E.G. ; Yi, K.J.
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The high performance of a resistive memory device based on electrochemical metallization is presented. With a solid electrolyte mixture consisting of zinc sulfide and silicon dioxide, the device combines the strengths of pure sulfide and pure oxide electrolytes, and exhibits various attractive characteristics such as forming-free switching, reasonably low currents, and high speed. Bipolar switching with an ON/OFF-state resistance ratio of about 100 is demonstrated by a direct-current quasi-static sweep. Pulse characterization shows that the device can be bistably SET and RESET using square pulses with pulsewidth down to 10 ns. Reliable endurance of 105 cycles and a stable retention time up to 106 s are also achieved.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 1 )