Referenced Items are not available for this document.
UV erasure times are measured and used to determine the degree of process variation across the die of FGMOS memories. Analysis of data obtained following exposure to ionizing radiation separates SEU-like mechanisms that generate anomalous decreases in erasure time from the uniform effects of TID.
Published in:
Nuclear Science, IEEE Transactions on
(Volume:58
,
Issue:
6
)
Date of Publication: Dec. 2011
- Page(s):
- 2673 - 2679
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 12408927
- Digital Object Identifier :
- 10.1109/TNS.2011.2172987
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 12 December 2011
- Issue Date :
- Dec. 2011
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
