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Role of Process Variation in the Radiation Response of FGMOS Devices

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4 Author(s)
McNulty, P.J. ; Dept. of Phys. & Astron., Clemson Univ., Clemson, SC, USA ; Poole, K.F. ; Scheick, L.Z. ; Sushan Yow

UV erasure times are measured and used to determine the degree of process variation across the die of FGMOS memories. Analysis of data obtained following exposure to ionizing radiation separates SEU-like mechanisms that generate anomalous decreases in erasure time from the uniform effects of TID.

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Nuclear Science, IEEE Transactions on  (Volume:58 ,  Issue: 6 )