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A Dual-Mode CMOS RF Power Amplifier With Integrated Tunable Matching Network

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7 Author(s)
Youngchang Yoon ; Georgia Inst. of Technol., Atlanta, GA, USA ; Jihwan Kim ; Hyungwook Kim ; Kyu Hwan An
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A dual-mode CMOS power amplifier (PA) with an integrated tunable matching network is presented. A switched capacitor is fully analyzed to implement a tunable matching network in terms of power-handling capability, tuning ratio, quality factor, and linearity. Based on the presented consideration, a 3.3-V 2.4-GHz fully integrated CMOS dual-mode PA is implemented in a 0.18-μm CMOS process. The PA has two power modes, high-power and low-power (LP), and each mode is optimally matched by the tunable matching network. The LP mode enables more than 50% dc current reduction from 0- to 10-dBm power range. The improved efficiency in this study is approximately twice that of other multimode CMOS PAs reported thus far.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:60 ,  Issue: 1 )