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High Current Gain Microwave Performance of Organic Metal-Base Transistor

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6 Author(s)
Abd. Rashid bin Mohd Yusoff ; Universidade Federal do Parana, Parana, Brazil ; Wilson Jose da Silva ; Ying Song ; Eikner Holz
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We report the realization of 140 nm emitter TPD/CuPc (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine/copper phthalocyanine) with cutoff frequency fT = 300 kHz. Our devices were grown on high-resistivity p-type float-zone silicon collector and implemented with an aluminum grid base feature a high and stable current gain well above 400. The present transistors are the first metal-base transistors employing double hole injection layer to feature current gain without any sign of degradation.

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IEEE Transactions on Nanotechnology  (Volume:11 ,  Issue: 3 )