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High Current Gain Microwave Performance of Organic Metal-Base Transistor

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6 Author(s)

We report the realization of 140 nm emitter TPD/CuPc (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine/copper phthalocyanine) with cutoff frequency fT = 300 kHz. Our devices were grown on high-resistivity p-type float-zone silicon collector and implemented with an aluminum grid base feature a high and stable current gain well above 400. The present transistors are the first metal-base transistors employing double hole injection layer to feature current gain without any sign of degradation.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:11 ,  Issue: 3 )

Date of Publication:

May 2012

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