High Current Gain Microwave Performance of Organic Metal-Base Transistor

We report the realization of 140 nm emitter TPD/CuPc (N,N′-diphenyl-N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine/copper phthalocyanine) with cutoff frequency f
$_T$
= 300 kHz. Our devices were grown on high-resistivity p-type float-zone silicon collector and implemented with an aluminum grid base feature a high and stable current gain well above 400. The present transistors are the first metal-base transistors employing double hole injection layer to feature current gain without any sign of degradation.