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Lateral-mode selectivity in external-cavity diode lasers with residual facet reflectivity

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4 Author(s)
Sharfin, W.F. ; MIT Lincoln Lab., Lexington, MA, USA ; Mooradian, A. ; Harding, C.M. ; Waters, R.G.

The relatively flat lateral gain profile across a wide-strip laser diode does not allow sufficient overlap with the Gaussian fundamental mode of an external resonator to achieve saturation of the gain in the wings of the mode profile. Thus, parasitic free-running oscillation of the diode in an external-cavity laser is permitted by residual facet reflectivity of the antireflection-coated diode, and degrades the lateral-mode-selectivity of the external resonator at injection currents exceeding the threshold of the solitary diode. A relation between the maximum injection current at which the external-cavity laser will operate in a single mode and the diode's facet reflectivity is given

Published in:

Quantum Electronics, IEEE Journal of  (Volume:26 ,  Issue: 10 )

Date of Publication:

Oct 1990

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