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Carrier transport and its variation of laser-lateral-crystallised poly-Si TFTs

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4 Author(s)
Kuroki, S.-I. ; Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan ; Fujii, S. ; Kotani, K. ; Ito, T.

Carrier transport in continuous-wave laser lateral-crystallised (CLC) poly-Si thin film transistors (TFTs) has been investigated. Large Si grains formed by the laser crystallisation, enhanced electron mobility of the CLC poly-Si TFT. It was found that the effective electron mobility was free from grain boundary scattering and was mainly governed by phonon scattering; its variation, however, was governed by the number of grains in the channel region.

Published in:

Electronics Letters  (Volume:47 ,  Issue: 24 )

Date of Publication:

November 24 2011

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