By Topic

Identification technique of FET model based on vector nonlinear measurements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Avolio, G. ; Dept. of Electron. Eng. (ESAT), K.U. Leuven, Leuven, Belgium ; Schreurs, D. ; Raffo, A. ; Crupi, G.
more authors

A new modelling approach which exploits only vector nonlinear measurements is described. The parameters of the I-V and Q-V non-linear constitutive functions are identified by combining low- and high-frequency large-signal measurements with a numerical optimisation routine. Low-frequency dispersion manifesting in the I-V characteristics is also correctly accounted for. As a case study a gallium nitride HEMT on silicon carbide substrate is considered and very good agreement between measurements and simulation is achieved.

Published in:

Electronics Letters  (Volume:47 ,  Issue: 24 )