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Identification technique of FET model based on vector nonlinear measurements

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7 Author(s)
G. Avolio ; Department of Electronic Engineering (ESAT) ; D. Schreurs ; A. Raffo ; G. Crupi
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A new modelling approach which exploits only vector nonlinear measurements is described. The parameters of the I-V and Q-V non-linear constitutive functions are identified by combining low- and high-frequency large-signal measurements with a numerical optimisation routine. Low-frequency dispersion manifesting in the I-V characteristics is also correctly accounted for. As a case study a gallium nitride HEMT on silicon carbide substrate is considered and very good agreement between measurements and simulation is achieved.

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Electronics Letters  (Volume:47 ,  Issue: 24 )