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Junctionless flexible oxide-based electric-double-layer thin-film transistors (TFTs) are fabricated on paper substrates at room temperature. Channel and source/drain electrodes are realized by an indium-tin-oxide (ITO) film without any source/drain junction. Effective field-effect modulation of drain current can be obtained when the thickness of the top ITO film is decreased to 20 nm. These junctionless paper TFTs show a good device performance with a small subthreshold swing of 0.21 V/dec and a large on/off ratio of 2 ×106. Such junctionless paper TFTs can provide a new opportunity for flexible paper electronics and low-cost portable-sensor applications.