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Influence of Gate Corrugations on the Performance of Thin-Film Transistors

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1 Author(s)
Sambandan, S. ; Dept. of Instrum. & Appl. Phys., Indian Inst. of Sci., Bangalore, India

This letter investigates the influence of a corrugated gate on the transfer characteristics of thin-film transistors. Corrugations that run parallel to the length of the channel from source to drain are patterned on the gate. The author finds that these corrugations result in higher currents as compared to conventional planar-gate transistors.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 1 )