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High-Performance GaN MOSFET With High- \kappa \hbox {LaAlO}_{3}/\hbox {SiO}_{2} Gate Dielectric

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3 Author(s)
Tsai, C.Y. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Wu, T.L. ; Chin, Albert

Using a high-κ LaAlO3/SiO2 gate dielectric, the recessed-gate GaN MOSFET has a low threshold voltage (Vt) of 0.1 V, low on-resistance (Ron) of 13.5 Ω·mm, high breakdown voltage of 385 V, high transconductance (gm) of 136 mS/mm, and record-best normalized drive current (μCox) of 172 μA/V2. Such excellent device integrity is due to the small capacitance equivalent thickness of 3.0 nm, using a high-κ gate dielectric and recessed-gate etching.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 1 )